Magnetoexciton dispersion in GaAs-(Ga,Al)As single and coupled quantum wells

نویسنده

  • Z. G. Koinov
چکیده

We discuss magnetoexcitons dispersion in single and coupled GaAs − (Ga,Al)As quantum wells using the Bethe-Salpeter (B-S) formalism. The B-S formalism in the case of quantum wells provides an equation for the exciton wave function which depends on two space variables plus the time variable, i.e. the B-S equation is 2 + 1-dimensional equation. We compare the results for magnetoexcitons dispersion, obtained in the LLL approximations with the results calculated by solving the exact B-S equation. It is shown that the exact B-S equation has an extra term (B-S term) that does not exist in the LLL approximation. Within the framework of the variational method, we obtain that, (i) the ground-state energy of a heavy-hole magnetoexciton with a zero wave vector in GaAs − (Ga,Al)As quantum wells, calculated by means of the exact B-S equation, is very close to the ground-state energy, obtained in the LLL approximation, (ii) in a strong perpendicular magnetic field the magnetoexciton dispersion (in-plane magnetoexciton mass) is determined mainly by the BS term rather than the term that describes the electron-hole Coulomb interaction in the LLL approximation.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Quasi-two-dimensional excitons in finite magnetic fields

We present a theoretical and experimental investigation of the effects of a magnetic field on quasi-twodimensional excitons. We calculate the internal structures and dispersion relations of spatially direct and indirect excitons in single and coupled quantum wells in a magnetic field perpendicular to the well plane. We find a sharp transition from a hydrogenlike exciton to a magnetoexciton with...

متن کامل

The Effect of Exchange-Correlation Holes on the Temperature Dependent Dynamic Dielectric Function of Single-Layer Quantum Wells and Coupled Nanolayers

In this paper, for the first time we have studied theoretically the effect of exchange-correlation holes around electrons in GaAlAs/GaAs/GaAlAs nanostructure on the temperature-dependent dynamic dielectric function of two-dimensional electron gas by employing random phase, STLS and Hubbard approximations. Also, we have investigated another interesting system which is coupled quantum wells struc...

متن کامل

Magneto-optics of the spatially separated electron and hole layers in GaAs/AlxGa12xAs coupled quantum wells

We report on the magneto-optical study of the spatially separated electron and hole layers in GaAs/AlxGa12xAs coupled quantum wells at low temperatures T>50 mK and high magnetic fields B <16 T. At high magnetic fields cusps are observed in the energy and intensity of the indirect ~interwell! exciton photoluminescence. We tentatively attribute these to the commensurability effects of the magneto...

متن کامل

Transport of magnetoexcitons in single and coupled quantum wells

The transport relaxation time τ(P ) and the mean free path of magnetoexcitons in single and coupled quantum wells are calculated ( P is the magnetic momentum of the magnetoexciton ). We present the results for magnetoexciton scattering in a random field due to ( i ) quantum well width fluctuations, ( ii ) composite fluctuations and ( iii ) ionized impurities. The time τ(P ) depends nonmonotonou...

متن کامل

Correlated Electron-Hole Transitions in Bulk GaAs and GaAs-(Ga,Al)As Quantum Wells: Effects of Applied Electric and In-Plane Magnetic Fields

The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductor heterostructures have been investigated within the effective-mass and parabolic band approximations for both bulk GaAs and GaAs-Ga1−xAlxAs quantum wells. The combined effects on the heterostructure properties of the applied crossed electric/magnetic fields together with the direct coupl...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2008